Advance Information The Serial Quad I/O™ (SQI™) family of flash-memory devices features a 4-bit, multiplexed I/O interface that allows for low-power, high-performance operation in a low pin-count package. System designs using SQI flash devices occupy less board space and ultimately lower system costs. All members of the 26 Series, SQI family are manufactu.
• Single Voltage Read and Write Operations
– 1.65-1.95V
• Serial Interface Architecture
– Nibble-wide multiplexed I/O’s with SPI-like serial command structure - Mode 0 and Mode 3
– Single-bit, SPI backwards compatible - Read, High-Speed Read, and JEDEC ID Read
• High Speed Clock Frequency
– 80 MHz - 320 Mbit/s sustained data rate
• Burst Modes
– Continuous linear burst
– 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
– Endurance: 100,000 Cycles
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read current: 12 mA (typical @ 80 MHz)
– Standby Curre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SST26WF016B |
Microchip |
1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
2 | SST26WF016BA |
Microchip |
1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory | |
3 | SST26WF040B |
Microchip |
1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory | |
4 | SST26WF040BA |
Microchip |
1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory | |
5 | SST26WF080B |
Microchip |
1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory | |
6 | SST26WF080BA |
Microchip |
1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory | |
7 | SST2602 |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
8 | SST2603 |
SeCoS |
P-Channel MOSFET | |
9 | SST2604 |
SeCoS |
N-Channel Enhancement Mode Power MosFET | |
10 | SST2605 |
SeCoS |
P-Channel MOSFET | |
11 | SST2610 |
VBsemi |
N-Channel MOSFET | |
12 | SST2610 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |