SST2610 - SeCoS

SST2610 N-Channel Enhancement Mode Power MosFET

z z The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. It is universally used for all commercial-industrial applications. APPLICATIONS z z Low on-resistance Capable of 2.5V gate drive PACKAGE INFORMATION REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.0.

Features

VGS ID ID ID PD Tj, Tstg Ratings 60 ±20 3.0 2.3 10 2 0.016 -55 ~ +150 Unit V V A A A W W/ ℃ ℃ THERMAL DATA Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Ratings 62.5 Unit ℃ / W RθJA 01-June-2005 Rev. A Page 1 of 4 www.DataSheet4U.com SST2610 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Forward Transconductance Gate Leakage Current Zero Gate Voltage Drain Current Zero Gate V.