These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited.
•
•
•
•
•
• 1.8A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D D
!
●
◀
▲
●
●
G
S
D-PAK
SSR Series
I-PAK
G D S
SSU Series
G!
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
SSR2N60B / SSU2N60B 600 1.8 1.1 6.0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSR2N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
2 | SSR2008CTM |
SSDI |
(SSR2008CTM - SSR2010CTM) CENTER TAP SCHOTTKY RECTIFIER | |
3 | SSR2008CTZ |
SSDI |
(SSR2008CTZ - SSR2010CTZ) CENTER TAP SCHOTTKY RECTIFIER | |
4 | SSR2008M |
SSDI |
(SSR2008M - SSR2010M) CHOTTKY RECTIFER | |
5 | SSR2008Z |
SSDI |
(SSR2008Z - SSR2010Z) CHOTTKY RECTIFER | |
6 | SSR2009CTM |
SSDI |
(SSR2008CTM - SSR2010CTM) CENTER TAP SCHOTTKY RECTIFIER | |
7 | SSR2009CTZ |
SSDI |
(SSR2008CTZ - SSR2010CTZ) CENTER TAP SCHOTTKY RECTIFIER | |
8 | SSR2009M |
SSDI |
(SSR2008M - SSR2010M) CHOTTKY RECTIFER | |
9 | SSR2009Z |
SSDI |
(SSR2008Z - SSR2010Z) CHOTTKY RECTIFER | |
10 | SSR200BG |
SMILE SOLAR ENERGY |
BIPV Solar Module | |
11 | SSR200MG |
SMILE SOLAR ENERGY |
BIPV Solar Module | |
12 | SSR2010 |
SSDI |
SCHOTTKY RECTIFIER |