Advanced Power MOSFET SSR/U2N60A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VD.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) BVDSS = 600 V RDS(on) = 5 Ω ID = 1.8 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC ) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSR2N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | SSR2008CTM |
SSDI |
(SSR2008CTM - SSR2010CTM) CENTER TAP SCHOTTKY RECTIFIER | |
3 | SSR2008CTZ |
SSDI |
(SSR2008CTZ - SSR2010CTZ) CENTER TAP SCHOTTKY RECTIFIER | |
4 | SSR2008M |
SSDI |
(SSR2008M - SSR2010M) CHOTTKY RECTIFER | |
5 | SSR2008Z |
SSDI |
(SSR2008Z - SSR2010Z) CHOTTKY RECTIFER | |
6 | SSR2009CTM |
SSDI |
(SSR2008CTM - SSR2010CTM) CENTER TAP SCHOTTKY RECTIFIER | |
7 | SSR2009CTZ |
SSDI |
(SSR2008CTZ - SSR2010CTZ) CENTER TAP SCHOTTKY RECTIFIER | |
8 | SSR2009M |
SSDI |
(SSR2008M - SSR2010M) CHOTTKY RECTIFER | |
9 | SSR2009Z |
SSDI |
(SSR2008Z - SSR2010Z) CHOTTKY RECTIFER | |
10 | SSR200BG |
SMILE SOLAR ENERGY |
BIPV Solar Module | |
11 | SSR200MG |
SMILE SOLAR ENERGY |
BIPV Solar Module | |
12 | SSR2010 |
SSDI |
SCHOTTKY RECTIFIER |