SSR2N60B |
Part Number | SSR2N60B |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
Features |
• • • • • • 1.8A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSR2N60B / SSU2N60B 600 1.8 1.1 6.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W... |
Document |
SSR2N60B Data Sheet
PDF 644.85KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSR2N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
2 | SSR2008CTM |
SSDI |
(SSR2008CTM - SSR2010CTM) CENTER TAP SCHOTTKY RECTIFIER | |
3 | SSR2008CTZ |
SSDI |
(SSR2008CTZ - SSR2010CTZ) CENTER TAP SCHOTTKY RECTIFIER | |
4 | SSR2008M |
SSDI |
(SSR2008M - SSR2010M) CHOTTKY RECTIFER | |
5 | SSR2008Z |
SSDI |
(SSR2008Z - SSR2010Z) CHOTTKY RECTIFER |