www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area θ Lower Leakage Current : 25 µA (Max.) @ VDS = 900V SSP2N90A BVDSS = 900 V RDS(on) = 7.0 Ω ID = 2 A TO-220 Low RDS(ON) : 5.838 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absol.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area θ Lower Leakage Current : 25 µA (Max.) @ VDS = 900V SSP2N90A BVDSS = 900 V RDS(on) = 7.0 Ω ID = 2 A TO-220 Low RDS(ON) : 5.838 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSP2N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
2 | SSP2N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
3 | SSP20N60S |
Super Semiconductor |
600V N-Channel MOSFET | |
4 | SSP-T |
ETC |
Surface Mount Quartz Crystal | |
5 | SSP-T5 |
ETC |
Surface Mount Quartz Crystal | |
6 | SSP-T7-F |
Seiko |
SMD Quartz Crystal | |
7 | SSP-T7-FL |
Seiko |
SMD Quartz Crystal | |
8 | SSP0430A-800480 |
Surenoo |
SPI TFT LCD Module | |
9 | SSP100 |
HALCRO |
(SSP80 / SSP100) Surround Sound Processor Manual | |
10 | SSP10N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
11 | SSP10N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
12 | SSP11N60C2 |
infineon |
Power Transistor |