SSP2N90A |
Part Number | SSP2N90A |
Manufacturer | Fairchild Semiconductor |
Description | www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area θ Lower Leakage C... |
Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area
θ Lower Leakage Current : 25 µA (Max.) @ VDS = 900V
SSP2N90A
BVDSS = 900 V RDS(on) = 7.0 Ω ID = 2 A
TO-220
Low RDS(ON) : 5.838 Ω (Typ.)
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive A... |
Document |
SSP2N90A Data Sheet
PDF 284.61KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSP2N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
2 | SSP2N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
3 | SSP20N60S |
Super Semiconductor |
600V N-Channel MOSFET | |
4 | SSP-T |
ETC |
Surface Mount Quartz Crystal | |
5 | SSP-T5 |
ETC |
Surface Mount Quartz Crystal |