Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Sy.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSP10N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
2 | SSP100 |
HALCRO |
(SSP80 / SSP100) Surround Sound Processor Manual | |
3 | SSP11N60C2 |
infineon |
Power Transistor | |
4 | SSP1601 |
Samsung Electronics |
DSP | |
5 | SSP1N50A |
Samsung Electronics |
Advanced Power MOSFET | |
6 | SSP1N60B |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | SSP-T |
ETC |
Surface Mount Quartz Crystal | |
8 | SSP-T5 |
ETC |
Surface Mount Quartz Crystal | |
9 | SSP-T7-F |
Seiko |
SMD Quartz Crystal | |
10 | SSP-T7-FL |
Seiko |
SMD Quartz Crystal | |
11 | SSP0430A-800480 |
Surenoo |
SPI TFT LCD Module | |
12 | SSP20N60S |
Super Semiconductor |
600V N-Channel MOSFET |