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SSM6J206FE |
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| Part Number | SSM6J206FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE ○ Power Management Switch Applications ○ High-Speed Switching Applications • • 1.8 V drive Low ON-resistance: Ron = 32... |
| Features |
lease design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
JEDEC JEITA TOSHIBA
― ―
2-2N1A
Weight: 3 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Drain –source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDS... |
| Document |
 SSM6J206FE Data Sheet
PDF 236.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM6J205FE |
Toshiba Semiconductor |
High-Speed Switching Applications |
|
| 2 | SSM6J207FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 3 | SSM6J212FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 4 | SSM6J213FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 5 | SSM6J214FE |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|