SSM4226M - Silicon Storage Technology

SSM4226M DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4226GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ T.

Features

n-ambient 3 Value Max. 62.5 Unit °C/W 8/06/2004 Rev.1.02 www.SiliconStandard.com 1 of 4 SSM4226M/GM Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.03 15 20 5 12 12 8 31 12 320 230 Max. Units 18 28 3 1 25 ±100 30 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ B VDSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance 2 VGS=10V, ID=6A VGS=4.5V, ID=4A VGS(th) gfs DSS www.DataSheet4U.com Gate.