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The SSM40P03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM40P03J in TO-251, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing i.
wer Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol www.DataSheet4U.com Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 110 Units °C/W °C/W 2/16/2005 Rev.2.2 www.SiliconStandard.com 1 of 5 SSM40P03GH,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.02 20 14 3 9 12 56 30 57 915 280 195 Max. Units 28 50 -1 -25 ±100 22 1465 V V.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSM40P03GH |
Silicon Standard |
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET |
|
| 2 | SSM40N03P |
Silicon Standard |
N-Channel MOSFET |
|
| 3 | SSM40N03S |
Silicon Standard |
N-Channel MOSFET |
|
| 4 | SSM40T03GH |
Silicon Standard |
N-channel Enhancement-mode Power MOSFET |
|
| 5 | SSM40T03GJ |
Silicon Standard |
N-channel Enhancement-mode Power MOSFET |
|
| 6 | SSM40T03GP |
Silicon Standard |
N-channel Enhancement-mode Power MOSFET |
|
| 7 | SSM40T03GS |
Silicon Standard |
N-channel Enhancement-mode Power MOSFET |
|
| 8 | SSM4224M |
Silicon Standard |
Dual N-Channel MOSFET |
|
| 9 | SSM4226GM |
Silicon Storage Technology |
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET |
|
| 10 | SSM4226M |
Silicon Storage Technology |
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET |
|
| 11 | SSM4228GM |
Silicon Standard |
Dual N-Channel MOSFET |
|
| 12 | SSM4228M |
Silicon Standard |
Dual N-Channel MOSFET |
|