SSM40T03GH - Silicon Standard

SSM40T03GH N-channel Enhancement-mode Power MOSFET

The SSM40T03GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM40T03GJ in TO-251, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing.

Features

mperature Range Operating Junction Temperature Range THERMAL DATA www.DataSheet4U.com Symbol Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 110 Unit °C/W °C/W Rthj-c Rthj-a 2/16/2005 Rev.2.1 www.SiliconStandard.com 1 of 5 SSM40T03GH,J ELECTRICAL CHARACTERISTICS @ Tj= 25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.032 Max. Units 25 45 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Te.