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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ.) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3.
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ.) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Curre.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SSI2N60B |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | SSI2007 |
SeCoS |
Power MOSFET |
|
| 3 | SSI204 |
Silicon Systems |
LOW POWER DTMF RECEIVER |
|
| 4 | SSI2085E-C |
SeCoS |
N & P-Ch Enhancement Mode Power MOSFET |
|
| 5 | SSI20N5E-C |
SeCoS |
Dual N-Ch Enhancement Mode Power MOSFET |
|
| 6 | SSI2154 |
SeCoS Halbleitertechnologie |
800mA 20V Dual N-Channel MOSFET |
|
| 7 | SSI263A |
Silicon Systems |
Phoneme Speech synthesizer |
|
| 8 | SSI10N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 9 | SSI122 |
Silicon Systems |
4-Channel Thin Film Read/Write Device |
|
| 10 | SSI1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET |
|
| 11 | SSI1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 12 | SSI1N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|