These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These dev.
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• 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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D2-PAK
SSW Series
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I2-PAK
SSI Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
SSW1N60B / SSI1N60B 600 1.0 0.6 3.0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSI1N60A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
2 | SSI1N50B |
Fairchild Semiconductor |
520V N-Channel MOSFET | |
3 | SSI10N60B |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
4 | SSI122 |
Silicon Systems |
4-Channel Thin Film Read/Write Device | |
5 | SSI2007 |
SeCoS |
Power MOSFET | |
6 | SSI204 |
Silicon Systems |
LOW POWER DTMF RECEIVER | |
7 | SSI2085E-C |
SeCoS |
N & P-Ch Enhancement Mode Power MOSFET | |
8 | SSI20N5E-C |
SeCoS |
Dual N-Ch Enhancement Mode Power MOSFET | |
9 | SSI2154 |
SeCoS Halbleitertechnologie |
800mA 20V Dual N-Channel MOSFET | |
10 | SSI263A |
Silicon Systems |
Phoneme Speech synthesizer | |
11 | SSI2N60B |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | SSI2N80A |
Fairchild Semiconductor |
Advanced Power MOSFET |