SSI20N5E-C - SeCoS

SSI20N5E-C Dual N-Ch Enhancement Mode Power MOSFET

The SSI20N5E-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSI20N5E-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced High Cell Density Trench Technology.

Features

 Advanced High Cell Density Trench Technology
 Super Low Gate Charge
 Green Device Available MARKING 20N5E PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch SOT-563 REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F G H J K Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30 0.20 0.40 Mounting Pad Layout ORDER INFORMATION Part Number Type SSI20N5E-C Lead (Pb)-free and Halogen-free
*Dimensions in millimeters ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=.