SSD35P06-C - SeCoS

SSD35P06-C P-Channel MOSFET

The SSD35P06-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD35P06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super .

Features

Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 35P06 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD35P06-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, @VGS= -10V 1 Pulsed Drain Current 3 TC=25°C TC=100°C VDS VGS ID IDM Total Power Dissipation TC=25°C PD Junction and Storag.