The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green .
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
Drain
REF.
A B
C D
GE
K M J
HF
MARKING
3055
Date Code
N O P
Gate
PACKAGE INFORMATION
Package TO-252 MPQ 2.5K Leader Size 13 inch
Source
A B C D E F G H
Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.15 2.40 0.45 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20
REF.
J K M N O P
Millimeter Min. Max. 2.30 REF. 0.64 0.90 0.50 1.1 0.9 1.65 0 0.15 0.43 0.58
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Dr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSD3055LA |
South Sea Semiconductor |
N-Channel MOSFET | |
2 | SSD3030N |
South Sea Semiconductor |
N-Channel MOSFET | |
3 | SSD3030P |
South Sea Semiconductor |
P-Channel Enhancement Mode MOSFET | |
4 | SSD30N10J |
SeCoS |
N-Channel MOSFET | |
5 | SSD30N15-60D |
SeCoS |
N-Channel MOSFET | |
6 | SSD30P06-45D |
SeCoS |
P-Channel MOSFET | |
7 | SSD3215B-C |
SeCoS |
N-Channel MOSFET | |
8 | SSD355 |
Frontier Electronics |
SUPER SWITCHING CHIP DIODE | |
9 | SSD35P03 |
SeCoS |
P-Channel MOSFET | |
10 | SSD35P06-C |
SeCoS |
P-Channel MOSFET | |
11 | SSD3840-V2 |
LITEMAX |
LCD Display | |
12 | SSD-C01G-3xx |
SiliconSystems |
CF RoHS |