The SSD3215B-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD3215B-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super .
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 3215B = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD3215B-C Lead (Pb)-free and Halogen-free TO-252(D-Pack) A BC D GE 1 Gate 2 Drain 3 Source K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.3 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.4 0.9 N 1.55 Typ. E6 7.7 O 0 0.15 F 2.90 REF P 0.58 REF. G 5.4 H 0.6 6.4 1.2 ABSOLUTE MAXIMUM RATINGS Parameter Symbol .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSD3030N |
South Sea Semiconductor |
N-Channel MOSFET | |
2 | SSD3030P |
South Sea Semiconductor |
P-Channel Enhancement Mode MOSFET | |
3 | SSD3055 |
SeCoS |
N-Channel MOSFET | |
4 | SSD3055LA |
South Sea Semiconductor |
N-Channel MOSFET | |
5 | SSD30N10J |
SeCoS |
N-Channel MOSFET | |
6 | SSD30N15-60D |
SeCoS |
N-Channel MOSFET | |
7 | SSD30P06-45D |
SeCoS |
P-Channel MOSFET | |
8 | SSD355 |
Frontier Electronics |
SUPER SWITCHING CHIP DIODE | |
9 | SSD35P03 |
SeCoS |
P-Channel MOSFET | |
10 | SSD35P06-C |
SeCoS |
P-Channel MOSFET | |
11 | SSD3840-V2 |
LITEMAX |
LCD Display | |
12 | SSD-C01G-3xx |
SiliconSystems |
CF RoHS |