SPW47N60S5 - Infineon Technologies

SPW47N60S5 Cool MOS Power Transistor

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Features

Symbol SPW47N60S5 Value Unit Drain Source voltage slope V DS = 480 V, ID = 47 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=2700µΑ, VGS=.