and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
ng and storage temperature Page 1 2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPW47N60C2 Symbol min. RthJC RthJA Tsold - Values typ. max. 0.3 62 3.33 260 Unit K/W W/K °C V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche br.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPW47N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
2 | SPW47N60C3 |
INCHANGE |
N-Channel MOSFET | |
3 | SPW47N60CFD |
Infineon Technologies |
CoolMOS Power Transistor | |
4 | SPW47N60CFD |
INCHANGE |
N-Channel MOSFET | |
5 | SPW47N60S5 |
Infineon Technologies |
Cool MOS Power Transistor | |
6 | SPW47N65C3 |
Infineon Technologies |
Power Transistor | |
7 | SPW47N65C3 |
INCHANGE |
N-Channel MOSFET | |
8 | SPW-TKP80E |
Sanyo |
Heaven Tsukatachi kitchen | |
9 | SPW07N60CFD |
Infineon Technologies |
Power-Transistor | |
10 | SPW11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
11 | SPW11N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
12 | SPW11N60C3 |
INCHANGE |
N-Channel MOSFET |