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and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
e V DS = 400 V, ID = 32 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A breakdown voltage Gate threshold voltage Zero gate voltage drain current 500 2.1 Values typ. 600 3 0.5 0.09 0.27 0.8 max. 3.9 µA 25 250 100 0.1.
SPW32N50C3 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤110mΩ ·Enhancement mode: ·100% av.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPW35N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPW35N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPW35N60CFD |
Infineon Technologies AG |
CoolMOS Power Transistor |
|
| 4 | SPW35N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPW3842S |
SeCoS |
High Performance Current Mode Controlers |
|
| 6 | SPW-TKP80E |
Sanyo |
Heaven Tsukatachi kitchen |
|
| 7 | SPW07N60CFD |
Infineon Technologies |
Power-Transistor |
|
| 8 | SPW11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 9 | SPW11N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 10 | SPW11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | SPW11N60CFD |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 12 | SPW11N60CFD |
INCHANGE |
N-Channel MOSFET |
|