SPU30P06P - INCHANGE

SPU30P06P P-Channel MOSFET

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL.

Features

·Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A)
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -30 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃
·THERMAL CHARACTERISTICS SYMBOL P.