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SPU30P06P |
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| Part Number | SPU30P06P |
| Manufacturer | INCHANGE |
| Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot varia... |
| Features |
·Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -30 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL P... |
| Document |
 SPU30P06P Data Sheet
PDF 256.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPU30N03 |
Infineon Technologies |
SIPMOS Power Transistor |
|
| 2 | SPU30N03L |
Siemens Semiconductor |
SIPMOS Power Transistor |
|
| 3 | SPU30N03S2-08 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 4 | SPU30N03S2L-10 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 5 | SPU01N60C3 |
Infineon |
Cool MOS Power Transistor |
|