SPD 28N03 SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 28 V A Enhancement mode RDS(on) 0.023 Ω • Avalanche rated • dv/dt rated • 175˚C operating temperature Type SPD28N03 SPU28N03 Package P-TO252 Ordering Code Q67040-S4138 Packaging Tape an.
• N channel
•
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 28
V A
Enhancement mode
RDS(on) 0.023 Ω
• Avalanche rated
• dv/dt rated
• 175˚C operating temperature
Type SPD28N03 SPU28N03
Package P-TO252
Ordering Code Q67040-S4138
Packaging Tape and Reel
Pin 1 G
Pin 2 Pin 3 D S
P-TO251-3-1 Q67040-S4140-A2 Tube
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 28 28 112 145 7.5 6 kV/µs mJ Unit A
ID
TC = 25 ˚C, 1) TC = 100 ˚C
Pulsed drain current
IDpulse EAS EAR
dv/d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPU28N03L |
Siemens Semiconductor |
SIPMOS Power Transistor | |
2 | SPU28N05L |
Siemens Semiconductor |
SIPMOS Power Transistor | |
3 | SPU21N05L |
Siemens Semiconductor |
SIPMOS Power Transistor | |
4 | SPU21N05L |
Infineon |
Power Transistor | |
5 | SPU23N05 |
Siemens Semiconductor |
SIPMOS Power Transistor | |
6 | SPU01N60C3 |
Infineon |
Cool MOS Power Transistor | |
7 | SPU01N60C3 |
INCHANGE |
N-Channel MOSFET | |
8 | SPU02N60 |
Siemens Semiconductor |
SIPMO Power Transistor | |
9 | SPU02N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
10 | SPU02N60C3 |
INCHANGE |
N-Channel MOSFET | |
11 | SPU02N60S5 |
Infineon Technologies |
Power Transistor | |
12 | SPU02N60S5 |
INCHANGE |
N-Channel MOSFET |