SPD21N05L SPU21N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V 55 V ID 20 A 20 A RDS(on) 0.07 Ω 0.07 Ω Package Ordering Code SPD21N05L SPU21N05L P-TO252 P-TO251 Q67040 - S4137- A2 Q67040 - S4131 - A2 Maximum Ratings .
temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)
*
* Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA RthJA
-55 ... + 175 -55 ... + 175
°C
≤ 2.7 ≤ 50 ≤ 100
55 / 175 / 56
K/W
*
* when mounted on 1 " square PCB ( FR4 );for recommended footprint
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V D.
SPD 21N05L SIPMOS® Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain s.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPU23N05 |
Siemens Semiconductor |
SIPMOS Power Transistor | |
2 | SPU28N03 |
Infineon Technologies |
SIPMOS Power Transistor | |
3 | SPU28N03L |
Siemens Semiconductor |
SIPMOS Power Transistor | |
4 | SPU28N05L |
Siemens Semiconductor |
SIPMOS Power Transistor | |
5 | SPU01N60C3 |
Infineon |
Cool MOS Power Transistor | |
6 | SPU01N60C3 |
INCHANGE |
N-Channel MOSFET | |
7 | SPU02N60 |
Siemens Semiconductor |
SIPMO Power Transistor | |
8 | SPU02N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
9 | SPU02N60C3 |
INCHANGE |
N-Channel MOSFET | |
10 | SPU02N60S5 |
Infineon Technologies |
Power Transistor | |
11 | SPU02N60S5 |
INCHANGE |
N-Channel MOSFET | |
12 | SPU03N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |