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·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.2 IDM Drain Current-Single Pulsed 18.6 PD Total Dissipation @TC=25℃ 74 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature.
·Static drain-source on-resistance:
RDS(on) ≤0.75Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Ultra low gate charge
·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
6.2
IDM
Drain Current-Single Pulsed
18.6
PD
Total Dissipation @TC=25℃
74
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ .
SPP06N60C3 - Infineon Technologies
and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information o.
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|---|---|---|---|---|
| 1 | SPP06N80C2 |
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| 2 | SPP06N80C3 |
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| 3 | SPP06N80C3 |
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| 4 | SPP02N60C3 |
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| 5 | SPP02N60C3 |
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| 6 | SPP02N60S5 |
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| 7 | SPP02N60S5 |
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| 8 | SPP02N80C3 |
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| 9 | SPP03N60C3 |
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| 10 | SPP03N60C3 |
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| 12 | SPP03N60S5 |
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