CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPP04N80C3 800 V .
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
SPP04N80C3
800 V 1.3 Ω 23 nC
PG-TO220-3
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Type SPP04N80C3
Package PG-TO220-3
Marking 04N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Par.
·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP04N50C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
2 | SPP04N50C3 |
INCHANGE |
N-Channel MOSFET | |
3 | SPP04N60C2 |
Infineon |
Cool MOS Power Transistor | |
4 | SPP04N60C3 |
INCHANGE |
TO-251 N-Channel MOSFET | |
5 | SPP04N60C3 |
Infineon |
Power Transistor | |
6 | SPP04N60C3 |
INCHANGE |
TO-220C N-Channel MOSFET | |
7 | SPP04N60S5 |
Infineon |
Power Transistor | |
8 | SPP04N60S5 |
INCHANGE |
N-Channel MOSFET | |
9 | SPP02N60C3 |
Infineon Technologies |
Power Transistor | |
10 | SPP02N60C3 |
INCHANGE |
N-Channel MOSFET | |
11 | SPP02N60S5 |
Infineon Technologies |
Power Transistor | |
12 | SPP02N60S5 |
INCHANGE |
N-Channel MOSFET |