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SPP04N80C3 |
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| Part Number | SPP04N80C3 |
| Manufacturer | INCHANGE |
| Description | ·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source V... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤1.3Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 63 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperatur... |
| Document |
 SPP04N80C3 Data Sheet
PDF 243.69KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPP04N80C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPP04N50C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPP04N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPP04N60C2 |
Infineon |
Cool MOS Power Transistor |
|
| 5 | SPP04N60C3 |
INCHANGE |
TO-251 N-Channel MOSFET |
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