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A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , V.
imum Thermal Resistance TC = 25 OC TC = 90 C ICM RθJC O
IC
-
-
80 60 120 0.45
o
A
A C/W
Over-Temperature Shutdown
Over-Temperature Shutdown Over-Temperature Shutdown Hysteresis Over-Temperature Output Tco Tsd 100 110 20 10 120
o
C C
o
10mV/oC
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•
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SPM6G150-060D
SENSITRON TECHNICAL DATA DATASHEET 4113, REV A PARAMETER SYMBOL MI N TYP MAX UNIT
ULTRAFAST DIODES RATING AND CHARACTERISTICS
Diode Peak Inverse Voltage C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPM6G120-120D |
Sensitron |
Three-Phase IGBT BRIDGE |
|
| 2 | SPM6G140-060D |
Sensitron |
Three-Phase IGBT BRIDGE |
|
| 3 | SPM6G060-120D |
Sensitron |
Three-Phase IGBT BRIDGE |
|
| 4 | SPM6G080-060D |
Sensitron |
Three-Phase IGBT BRIDGE |
|
| 5 | SPM6G080-120D |
Sensitron |
Three-Phase IGBT BRIDGE |
|
| 6 | SPM6G250-120D |
Sensitron |
Three-Phase IGBT BRIDGE |
|
| 7 | SPM6-1000M |
Sirenza Microdevices |
LOW COST MINIATURE DOUBLE BALANCED MIXER |
|
| 8 | SPM6-2200H |
Sirenza Microdevices |
LOW COST MINIATURE DOUBLE BALANCED MIXER |
|
| 9 | SPM6-250H |
Sirenza Microdevices |
LOW COST MINIATURE DOUBLE BALANCED MIXER |
|
| 10 | SPM6530 |
TDK |
INDUCTORS |
|
| 11 | SPM6M020-060D |
Sensitron |
Three-Phase MOSFET BRIDGE |
|
| 12 | SPM6M050-010D |
Sensitron |
Three-Phase MOSFET BRIDGE |
|