SPM6G080-120D - Sensitron

SPM6G080-120D Three-Phase IGBT BRIDGE

A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , V.

Features

4- Under-voltage shutdown is automatically reset after 300 msec once the VCC rises above the threshold limit. 5- Desaturation shutdown is a latching feature and internally reset after 300 msec. 6- When any of the internal protection features is activated, SD is pulled down. 7- SD can be used to shutdown all IGBTs except the brake IGBT by an external command. An open collector switch shall be used to pull down SD externally. 8- Also, SD can be used as a fault condition output. Low output at SD indicates a fault situation. b- Fault Output Feature: 1- Pin 18 Flt is a dual function pin. It is int.