SPM6M050-010D - Sensitron

SPM6M050-010D Three-Phase MOSFET BRIDGE

SPM6M050-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY A Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) MOSFET Characteristics CHARACTERISTIC Continuous Drain Current Maximum Pulsed Drain Current Drain-to-Source www.DataSheet4U.com Breakdown Volt.

Features

0.013 25 150 60 120 3.8 0.90 0.30 0.7 - MAX. 50 50 150 3.0 0.018 250 UNIT A A V V Ω µA ns - - nF - -40 1 150 o C/W o C Source Drain Diode Characteristics CHARACTERISTIC Forward Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS Tj=25 oC, IF = 30A Tj = 25 oC, IS = 30 A, di/dt = 100 A/ µs MIN. TYP. 0.80 90 MAX. 1.1 130 UNIT V ns
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• SPM6M050-010D SENSITRON TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY.