Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-.
.
SPI16N50C3 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤280mΩ ·Enhancement mode ·Fast Sw.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPI100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 2 | SPI100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 3 | SPI100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 4 | SPI100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 5 | SPI10N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 6 | SPI10N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 7 | SPI10N10L |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 8 | SPI11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 9 | SPI11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | SPI11N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 11 | SPI11N60CFD |
Infineon Technologies |
Power-Transistor |
|
| 12 | SPI11N60S5 |
Infineon Technologies |
Power Transistor |
|