SPI10N10 - Infineon Technologies

SPI10N10 SIPMOS Power-Transistor

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.

Features

SPB10N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area F) Symbol min. RthJC RthJA RthJA - Values typ. max. 3 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = VDS ID = 21 µA Zero gate voltage drain curr.