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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPI11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAX.
·Static drain-source on-resistance:
RDS(on) ≤3mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
11
IDM
Drain Current-Single Pulsed
22
PD
Total Dissipation @TC=25℃
125
Tj
Max. Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A.
SPI11N60S5 - Infineon Technologies
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPI11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 2 | SPI11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPI11N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPI11N60CFD |
Infineon Technologies |
Power-Transistor |
|
| 5 | SPI11N65C3 |
Infineon Technologies |
Power Transistor |
|
| 6 | SPI11N65C3 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | SPI100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 8 | SPI100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 9 | SPI100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 10 | SPI100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 11 | SPI10N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 12 | SPI10N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|