SPI15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC TO-262-3-1 CoolMOS C3 designed for: • Notebook Adapter Type SPI15N65C3 Package P.
• Low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC
TO-262-3-1 CoolMOS C3 designed for:
• Notebook Adapter
Type SPI15N65C3
Package P-TO262-3-1
Marking 15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C
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Value 15 9.4 45 460 0.8
Unit A
Pulsed drain current3) Avalanche energy, single pulse Avalanche energy.
·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPI15N60C3 |
Infineon Technologies |
Power Transistor | |
2 | SPI15N60C3 |
INCHANGE |
N-Channel MOSFET | |
3 | SPI15N60CFD |
INCHANGE |
N-Channel MOSFET | |
4 | SPI15N60CFD |
Infineon Technologies |
CoolMOSTM Power Transistor | |
5 | SPI100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPI100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
7 | SPI100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
8 | SPI100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
9 | SPI10N10 |
Infineon Technologies |
SIPMOS Power-Transistor | |
10 | SPI10N10 |
Infineon Technologies |
SIPMOS Power-Transistor | |
11 | SPI10N10L |
Infineon Technologies |
SIPMOS Power-Transistor | |
12 | SPI11N60C3 |
Infineon Technologies |
Power Transistor |