SPI15N60CFD CoolMOSTM Power Transistor Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified according to JEDEC1) for target applications CoolMOS CFD designed for: • Softswitching PWM Stages • LCD & CRT TV Type Type SPI15N60CFD SPP15N60C.
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications CoolMOS CFD designed for:
• Softswitching PWM Stages
• LCD & CRT TV Type Type SPI15N60CFD SPP15N60CFD Package Package PG-TO262 PG-TO220 Marking Marking 15N60CFD 15N60CFD
Product Summary V DS @ Tjmax R DS(on),max ID 650 V
0.330 Ω 13.4 PG-TO262 A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulse.
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.33Ω ·Enhancement mode ·Fast Sw.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPI15N60C3 |
Infineon Technologies |
Power Transistor | |
2 | SPI15N60C3 |
INCHANGE |
N-Channel MOSFET | |
3 | SPI15N65C3 |
INCHANGE |
N-Channel MOSFET | |
4 | SPI15N65C3 |
Infineon Technologies |
CoolMOSTM Power Transistor | |
5 | SPI100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPI100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
7 | SPI100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
8 | SPI100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
9 | SPI10N10 |
Infineon Technologies |
SIPMOS Power-Transistor | |
10 | SPI10N10 |
Infineon Technologies |
SIPMOS Power-Transistor | |
11 | SPI10N10L |
Infineon Technologies |
SIPMOS Power-Transistor | |
12 | SPI11N60C3 |
Infineon Technologies |
Power Transistor |