SPI10N10 |
Part Number | SPI10N10 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
Features |
SPB10N10
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
F)
Symbol min. RthJC RthJA RthJA -
Values typ. max. 3 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1
Values typ. 3 max. 4
Unit
V
Gate threshold voltage, VGS = VDS
ID = 21 µA
Zero gate voltage drain curr... |
Document |
SPI10N10 Data Sheet
PDF 787.37KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SPI10N10 |
Infineon Technologies |
SIPMOS Power-Transistor | |
2 | SPI10N10L |
Infineon Technologies |
SIPMOS Power-Transistor | |
3 | SPI100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPI100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPI100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor |