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and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
EC 68-1 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPI47N10L SPP47N10L,SPB47N10L Symbol min. RthJC RthJA RthJA - Values typ. max. 0.85 62 62 40 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 100 1.2 Values typ. 1.6 max. 2 Unit V Gate threshol.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB47N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 2 | SPB42N03S2L-13 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 3 | SPB46N03 |
Siemens Semiconductor |
SIPMOS-TM POWER TRANSISTOR |
|
| 4 | SPB-002 |
SSDI |
10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY |
|
| 5 | SPB-2026Z |
Sirenza Microdevices |
InGaP Amplifier |
|
| 6 | SPB-2026Z |
RFMD |
0.7 GHz to 2.2 GHz 2W InGaP Amplifier |
|
| 7 | SPB-3018 |
Sirenza Microdevices |
Medium Power Active Bias InGaP/GaAs HBT Amplifier |
|
| 8 | SPB-3018Z |
Sirenza Microdevices |
Medium Power Active Bias InGaP/GaAs HBT Amplifier |
|
| 9 | SPB-3610G |
Optoway Technology |
Fiber SFP Transceiver |
|
| 10 | SPB-3610xG |
Optoway Technology |
Fiber SFP Transceiver |
|
| 11 | SPB-3620G |
Optoway Technology |
Fiber SFP Transceiver |
|
| 12 | SPB-3620xG |
Optoway Technology |
Fiber SFP Transceiver |
|