and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, c.
• N-channel
• Enhancement mode
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Avalanche rated
• dv /dt rated P-TO262-3-1
Product Summary V DS R DS(on),max ID 30 12.9 42 V mΩ A
P-TO263-3-2
P-TO220-3-1
Type SPP42N03S2L-13 SPB42N03S2L-13 SPI42N03S2L-13
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4034 Q67042-S4035 Q67042-S4104
Marking 2N03L13 2N03L13 2N03L13
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T C=25 °C T C=100 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPB46N03 |
Siemens Semiconductor |
SIPMOS-TM POWER TRANSISTOR | |
2 | SPB47N10 |
Infineon Technologies |
SIPMOS Power-Transistor | |
3 | SPB47N10L |
Infineon Technologies |
SIPMOS Power-Transistor | |
4 | SPB-002 |
SSDI |
10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY | |
5 | SPB-2026Z |
Sirenza Microdevices |
InGaP Amplifier | |
6 | SPB-2026Z |
RFMD |
0.7 GHz to 2.2 GHz 2W InGaP Amplifier | |
7 | SPB-3018 |
Sirenza Microdevices |
Medium Power Active Bias InGaP/GaAs HBT Amplifier | |
8 | SPB-3018Z |
Sirenza Microdevices |
Medium Power Active Bias InGaP/GaAs HBT Amplifier | |
9 | SPB-3610G |
Optoway Technology |
Fiber SFP Transceiver | |
10 | SPB-3610xG |
Optoway Technology |
Fiber SFP Transceiver | |
11 | SPB-3620G |
Optoway Technology |
Fiber SFP Transceiver | |
12 | SPB-3620xG |
Optoway Technology |
Fiber SFP Transceiver |