SPB11N60C3 - Infineon Technologies

SPB11N60C3 Cool MOS Power Transistor

Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO262-3-1 P-.

Features

anche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Page 1 2003-07-01 Final data Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - .