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SPB11N60C3 |
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| Part Number | SPB11N60C3 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor SPB11N60C3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio... |
| Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 11 7 33 PD Total Dissipation @TC=25℃ 125 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHAR... |
| Document |
 SPB11N60C3 Data Sheet
PDF 254.37KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPB11N60C2 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPB11N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 4 | SPB11N60S5 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 5 | SPB11N60S5 |
INCHANGE |
N-Channel MOSFET |
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