SPB11N60C2 - Infineon Technologies

SPB11N60C2 Cool MOS Power Transistor

Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.38 11 P-TO220-3-1 1 P-TO220-3-31 2 3 Type.

Features

s, Tjmax =150°C A V/ns V W dv/dt VGS VGS Ptot Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 125 33 Operating and storage temperature Page 1 Tj , Tstg -55...+150 °C 2002-08-12 Final data Thermal Characteristics Parameter Characteristics SPP11N60C2, SPB11N60C2 SPA11N60C2 Symbol min. Values typ. max. Unit Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) .