SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB08P06P G -60 V 0.3 Ω -8.8 A PG-TO263-3 Type Package SPB08P06PG PG-TO2.
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPB08P06P G
-60 V 0.3 Ω -8.8 A
PG-TO263-3
Type
Package
SPB08P06PG PG-TO263-3
Tape and reel information 1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=100 °C T A=25 °C
Marking Lead free 08P06P Yes
Packing Non d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPB08P06P |
Infineon Technologies |
Power-Transistor | |
2 | SPB08P06P |
INCHANGE |
P-Channel MOSFET | |
3 | SPB02N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
4 | SPB02N60C3 |
INCHANGE |
N-Channel MOSFET | |
5 | SPB02N60S5 |
Infineon Technologies |
Cool MOS Power Transistor | |
6 | SPB02N60S5 |
INCHANGE |
N-Channel MOSFET | |
7 | SPB03N60C3 |
Infineon Technologies |
Cool MOS& Power Transistor | |
8 | SPB03N60C3 |
INCHANGE |
N-Channel MOSFET | |
9 | SPB03N60S5 |
Infineon Technologies |
Power Transistor | |
10 | SPB04N50C3 |
INCHANGE |
N-Channel MOSFET | |
11 | SPB04N50C3 |
Infineon Technologies |
Power Transistor | |
12 | SPB04N60C2 |
Infineon |
Cool MOS Power Transistor |