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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL.
·Static drain-source on-resistance:
RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A)
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-8.8
PD
Total Dissipation @TC=25℃
42
Tj
Max. Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAME.
SPB08P06P - Infineon Technologies
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temp.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB08P06PG |
Infineon Technologies |
Power-Transistor |
|
| 2 | SPB02N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPB02N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPB02N60S5 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 5 | SPB02N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | SPB03N60C3 |
Infineon Technologies |
Cool MOS& Power Transistor |
|
| 7 | SPB03N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | SPB03N60S5 |
Infineon Technologies |
Power Transistor |
|
| 9 | SPB04N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | SPB04N50C3 |
Infineon Technologies |
Power Transistor |
|
| 11 | SPB04N60C2 |
Infineon |
Cool MOS Power Transistor |
|
| 12 | SPB04N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|