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Isc N-Channel MOSFET Transistor SPB03N60C3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS.
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
3.2 2
9.6
PD
Total Dissipation @TC=25℃
38
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHA.
SPB03N60C3 - Infineon Technologies
Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A Cool MOS™ Power Transistor Featu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB03N60S5 |
Infineon Technologies |
Power Transistor |
|
| 2 | SPB02N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPB02N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPB02N60S5 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 5 | SPB02N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | SPB04N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | SPB04N50C3 |
Infineon Technologies |
Power Transistor |
|
| 8 | SPB04N60C2 |
Infineon |
Cool MOS Power Transistor |
|
| 9 | SPB04N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 10 | SPB04N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 11 | SPB04N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | SPB04N60S5 |
Infineon |
Cool MOS Power Transistor |
|