Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor SPA08N80C3 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
·With TO-220F package
·Low input capacitance and gate charge
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
INCHANGE Semiconductor
SPA08N80C3
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
Drain Current-Single Pulsed
±30
8 5.1
24
PD
Total Dissipation @TC=25℃
40
Tj
Max. Operating Junction Temperature
150
Tstg
St.
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak curren.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA08N50C3 |
INCHANGE |
N-Channel MOSFET | |
2 | SPA08N50C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
3 | SPA02-8028 |
CHIKARA |
Power Inductors | |
4 | SPA02-8038 |
CHIKARA |
Power Inductors | |
5 | SPA02-8043 |
CHIKARA |
Power Inductors | |
6 | SPA02-8058 |
CHIKARA |
Power Inductors | |
7 | SPA02N80C3 |
Infineon Technologies |
Power Transistor | |
8 | SPA02N80C3 |
INCHANGE |
N-Channel MOSFET | |
9 | SPA03N60C3 |
INCHANGE |
N-Channel MOSFET | |
10 | SPA03N60C3 |
Infineon Technologies |
Power Transistor | |
11 | SPA04N50C3 |
INCHANGE |
N-Channel MOSFET | |
12 | SPA04N50C3 |
Infineon Technologies |
Cool MOS& Power Transistor |