CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances • Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed fo.
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
SPA02N80C3
800 V 2.7 Ω 12 nC
Type SPA02N80C3
Package PG-TO220-3
Marking 02N80C3
Maximum ratings, at T j=25 °C, .
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switchin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA02-8028 |
CHIKARA |
Power Inductors | |
2 | SPA02-8038 |
CHIKARA |
Power Inductors | |
3 | SPA02-8043 |
CHIKARA |
Power Inductors | |
4 | SPA02-8058 |
CHIKARA |
Power Inductors | |
5 | SPA03N60C3 |
INCHANGE |
N-Channel MOSFET | |
6 | SPA03N60C3 |
Infineon Technologies |
Power Transistor | |
7 | SPA04N50C3 |
INCHANGE |
N-Channel MOSFET | |
8 | SPA04N50C3 |
Infineon Technologies |
Cool MOS& Power Transistor | |
9 | SPA04N60C2 |
Infineon |
Cool MOS Power Transistor | |
10 | SPA04N60C3 |
INCHANGE |
N-Channel MOSFET | |
11 | SPA04N60C3 |
Infineon Technologies |
Power Transistor | |
12 | SPA04N80C3 |
Infineon |
CoolMOS Power Transistor |