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SPA02N80C3 - Infineon Technologies

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SPA02N80C3 Power Transistor

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances • Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed fo.

Features


• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward) Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPA02N80C3 800 V 2.7 Ω 12 nC Type SPA02N80C3 Package PG-TO220-3 Marking 02N80C3 Maximum ratings, at T j=25 °C, .

The same part from a different manufacturer

Datasheet SPA02N80C3 - INCHANGE SPA02N80C3

Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switchin.

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