SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.6 7.6 • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 23 1 • PG-TO-220-3-31;-.
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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 7.6A@ TC=25℃ ·Drain Source Voltage-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA08N80C3 |
Infineon Technologies |
Power Transistor | |
2 | SPA08N80C3 |
INCHANGE |
N-Channel MOSFET | |
3 | SPA02-8028 |
CHIKARA |
Power Inductors | |
4 | SPA02-8038 |
CHIKARA |
Power Inductors | |
5 | SPA02-8043 |
CHIKARA |
Power Inductors | |
6 | SPA02-8058 |
CHIKARA |
Power Inductors | |
7 | SPA02N80C3 |
Infineon Technologies |
Power Transistor | |
8 | SPA02N80C3 |
INCHANGE |
N-Channel MOSFET | |
9 | SPA03N60C3 |
INCHANGE |
N-Channel MOSFET | |
10 | SPA03N60C3 |
Infineon Technologies |
Power Transistor | |
11 | SPA04N50C3 |
INCHANGE |
N-Channel MOSFET | |
12 | SPA04N50C3 |
Infineon Technologies |
Cool MOS& Power Transistor |