SP823CGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 80V 80A 5.5 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless.
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=70°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case Limit 80 ±20 80 64 163 930 83 53 -55 to 150 1.5 Units V V A A A mJ W W °C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SP820S |
SeCoS |
(SP810S - SP8100S) 8.0AMP Schottky Barrier Rectifiers | |
2 | SP8220BHb |
SERIT |
Digital QAM & Terrestrial NIM | |
3 | SP8221BHb |
SERIT |
Digital QAM & Terrestrial NIM | |
4 | SP8255 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
5 | SP8256 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
6 | SP80001 |
SIPAT |
800MHz Low-loss SAW Filter 53MHz Bandwidth | |
7 | SP8005 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
8 | SP8006 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
9 | SP8007 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | SP8008 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
11 | SP8008-08UTG |
Littelfuse |
TVS Diode Arrays | |
12 | SP8009 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |