SP8255 - SamHop Microelectronics

SP8255 Dual N-Channel Enhancement Mode Field Effect Transistor

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP8255 Ver 1.1 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 15.0 @ VGS=4.5V 16.0 @ VGS=4.0V 7A 16.5 @ VGS=3.7V 18.0 @ VGS=3.1V 23.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protecte.

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. DFN 2X5 D1/D2 G2 S2 S2 G1 S1S1 (Bottom view) G1 3 S1 2 S1 1 Bottom Drain Contact 4 G2 5 S2 6 S2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a c TA=25°C TA=70°C IDM -Pulsed c PD Maximum Power Dissipation a TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient R JC Thermal Re.